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| MOSFET INCHANGE IRF630F N-channel mosfet transistor Features With TO-220F package Low on-stateand thermal resistance Fast switching VDSS=200V; RDS(ON)U 0.4| ;ID=9A 1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25ae SYMBOL VDSS VGS ID Ptot Tj PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25ae Total Dissipation@TC=25ae A RATING 200 20 9 35 UNIT V V A W Tstg SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD TOR NDU TO-220F ICO Electrical Characteristics Tc=25ae E ES M ANG INCH Operating Junction temperature Storage temperature 150 ae ae -65~150 PARAMETER CONDITIONS MIN MAX UNIT Drain-source breakdown voltage VGS=0; ID=0.25mA 200 2 V Gate threshold voltage Drain-source on-stage resistance Gate source leakage current Zero gate voltage drain current Diode forward voltage VDS= VGS; ID=1mA VGS=10V; ID=5.4A VGS=A 20V;VDS=0 4 400 A 100 V m| nA uA V VDS=200V; VGS=0 IF=9A; VGS=0 10 1.2 |
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